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November 2013
F D B 15 N 50
N-Channel UniFET TM MOSFET
5 00 V, 15 A, 380 mΩ
Features
? Low gate charge Q g results in simple drive requirement
(Typ. 33 nC)
? Improved Gate, avalanche and high reapplied dv/dt
ruggedness
? Reduced R DS(on) ( 330m? ( Typ.) @ V GS = 10 V, I D = 7.5 A)
? Reduced Miller capacitance and low Input capacitance
(Typ. C rss = 16 pF)
? Improved switching speed with low EMI
? 175 o C rated junction temperature
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and
DMOS technology. This MOSFET is tailored to reduce
on-state resistance, and to provide better switching
performance and higher avalanche energy strength. This
device family is suitable for switching power converter
applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp
ballasts.
Applications
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
S
Absolute Maximum Ratings T C = 25 o C unless otherwise note d.
Continuous (T C = 100 C, V GS = 10V)
Symbol
V DSS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T C = 25 o C, V GS = 10V)
o
FDB15N50
500
±30
15
11
Unit
V
V
A
A
Pulsed
(Note 1)
60
A
P D
Power dissipation
Derate above 25 o C
300
2
W
W/ o C
T J , T STG
Operating and Storage Temperature
Soldering Temperature for 10 seconds
-55 to 175
300 (1.6mm from case)
o
o
C
C
Thermal Characteristics
C/W
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance Junction to Case , Max.
Thermal Resistance Junction to Ambient , Max.
FDB15N50
0.50
62
Unit
o
o C/W
? 2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C 1
1
www.fairchildsemi.com
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